PTFA220121M
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Description
The PTFA220121M is an u...
PTFA220121M
High Power RF LDMOS Field Effect
Transistor 12 W, 28 V, 700 – 2200 MHz
Description
The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in a
nsmall overmolded plastic package.
PTFA220121M Package PG-SON-10
desigTwo-tone Drive-up
VDD = 28 V, IDQ = 150 mA,
wƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz
r ne-10 50
fo-15 45 dEfficiency
e-20 40
d-25 35
en-30 30
m-35
IMD3
25
m-40 20
co-45 15
re-50 10 t33 34 35 36 37 38 39 40 41 42
noOutput Power, PEP (dBm)
Features
Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –45.5 dBc
Typical two-carrier WCDMA performance at 877 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –44.5 dBc
Typical CW performance, 2140 MHz, 28 V - POUT = 41.6 dBm - Efficiency = 53.5% - Gain = 15.5 dB
Typical CW performance, 877 MHz, 28 V - POUT = 41.8 dBm - Eff...
