Document
PTFA080551E/FConfidential, Limited Internal Distribution
TCohnefirdmentaialll,yL-imEintehdaInntecrneadl DiHstirgibhutioPnower RF LDMOS FETs 5T5heWrm, 8a6ll9y-–E9n6h0anMcHezd High Power RF LDMOS FETs 55 W, 869 – 960 MHz
Description
PTFA080551E PPTTFFAA008800555511EF PTFA080551F
TDheesPcTrFiAp0t8io05n51E and PTFA080551F are 55-watt LDMOS FETs PTFA080551E
designed for EDGE and CDMA power amplifier applications in the Package H-36265-2
8T6h9e toPT96F0A0M8H0z55b1aEnda. nFdeaPtuTrFeAs 0in8c0lu5d5e1Finpauret m5a5t-cwhainttgLaDndMtOheSrmFaElTlysednehsiagnnceeddfopracEkDaGgeEsawnidthCsDloMttAedporwear ralemspsliffliaenr gaepsp.liMcaatniounfsacinturtehde w86it9htoIn9fi6n0eoMnH'sz abdavnadn. cFeedatuLrDeMs iOncSlupdreocinepsust,mthaetcsheindgeavnicdetsheprrmovaildlye-
nexnchealnlecnetdthpearcmkalgepserwfoirtmh asnlocteteadnodr seuaprelersiosr frlaenliagbeisli.tyM. anufactured sigwith WInoflifnsepeoend's's advanced LDMOS process, these devices provide eexcellent thermal performance and sup.