Wideband RF LDMOS Integrated Power Amplifier
PTMA210152M
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz
Description
The PTMA210152M is a w...
Description
PTMA210152M
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz
Description
The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermallyenhanced overmolded package for cool and reliable operation.
PTMA210152M Package PG-DSO-20-63
Gain (dB) Return Loss (dB)
Broadband Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA
fixture tuned for 2110 - 2170 MHz
32 20
28 Gain 24
10 0
20 Return Loss
16
-10 -20
12 1500
1700 1900 2100 2300 Frequency (MHz)
-30 2500
Features
Designed for wide RF bandwidth and low memory effects
Broadband input on-chip matching
Typical two-carrier WCDMA performance at 2140 MHz, 28 V, 7 W avg. - Gain = 28.5 dB - Power Added Efficiency = 33 % - IMD3 = –32 dBc
Typical CW performance at 2140 MHz, 28 V - Output power at P1dB ~ 20 W - Efficiency > 49%
Integrated ESD protectio...
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