SCT2080KE

SCT2080KE N-channel SiC power MOSFET VDSS RDS(on) (Typ.) ID 1200V 80mΩ 40A lOutline TO-247 TO-247N Datasheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lApplication ・Solar inverters ・DC/DC converters ・Induction heating ・Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (ｔsurge ˂ 300nsec) Total power dissipation TC=25°C, See Fig.1 TC=100°C, See Fig.1 Junction temperature Range of storage temperature lInner circuit (1) Gate (2) Drain (3) Source * Body Diode lPackaging specifications*1 Package Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking TO-247 TO-247N Tube 30 C C11 SCT2080KE Symbol VDSS ID *2 ID *2 ID,pulse *3 VGSS VGSS_surge*4 PD Tj Tstg Value 1200 40 28 80 -6 to +22 -10 to +26 262 130 175 -55 to +175 Unit V A A A V V W W °C °C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 TSQ50210-SCT2080KE 28.Mar.2019 - rev.004 SCT2080KE Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 1200 - -V Zero gate voltage drain current Gate - Source leakage current Gate - Source leakage current Gate th...