STPSC6H065DLF

STPSC6H065DLF Datasheet 650 V power Schottky silicon carbide diode Product status link STPSC6H065DLF Product summary Symbol Value IF(AV) 6A VRRM 650 V VF(typ.) 1.38 V T j(max.) 175 °C Product label Features Less than 1 mm height package High creepage package No or negligible reverse recovery Temperature independent switching behavior High forward surge capability Low drop forward voltage Power efficient product ECOPACK2 compliant component Applications Switch mode power supply Boost PFC Bootstrap diode LLC clamping function High frequency inverter applications Description This 6 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Qualified in low profile package, the STPSC6H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains. DS12820 - Rev 2 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPSC6H065DLF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise ...