MR48V256C
32,768-Word 8-Bit FeRAM (Ferroelectric Random Access Memory)
FEDR48V256C-04
Issue Date: Nov. 15, 2018
GENERAL DESCRIPTION
The MR48V256C is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are nonvolatile, e...
