DatasheetsPDF.com

GC50MPS12-247 Dataheets PDF



Part Number GC50MPS12-247
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Carbide Schottky Diode
Datasheet GC50MPS12-247 DatasheetGC50MPS12-247 Datasheet (PDF)

GC50MPS12-247 1200V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 1200 V = 70 A = 110 nC Advantages • Low Standby Power Los.

  GC50MPS12-247   GC50MPS12-247



Document
GC50MPS12-247 1200V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 1200 V = 70 A = 110 nC Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current Applications • Boost Diode in Power Factor Correction (PFC) • Switched Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Motor Drives • Freewheeling / Anti-parallel Diode in Inverters • Solar In.


GR1500JT17-263 GC50MPS12-247 GC15MPS12-247


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)