GA300ABPL12

Parameter IGBT Collector-Emitter Voltage DC-Collector Current Gate Emitter Peak Voltage Operating Temperature Storage Temperature Insulation Test Voltage Free-wheeling diode DC-Forward Current Repetitive Peak Forward Current Forward Surge Current Thermal Properties Th. Resistance Junction to Case Th. Resistance Case to Heat Sink Symbol VCES ICM VGES Tvj Tstg VISOL IF IFM IFSM RthJC RthCS Mechanical Properties Mounting Torque Terminal Connection Torque Weight Case Color Dimensions Md Conditions Values Units Circuit Diagram Tc=25ºC (85ºC) RMS, 1min, 50 Hz 1200 450 (300) ±20 -40 to +125 -40 to +125 2500 V A V4 ºC ºC V5 3 1 Tc=25ºC (85ºC) tP= 1ms tP= 10ms, Sin, Tj = 150ºC 450 (300) 900 (600) 2200 A A6 A 7 0.06 K/W 0.03 K/W Values Min Typ Max 3 6 Nm 2.5 5 Nm 324 g White 107.5x62x31 mm © 2010 GeneSiC Semiconductor Page 1 of 4 http://www.genesicsemi.com Parameter IGBT Gate Threshold Voltage Collector-Emitter Cut-Off Current Gate-Leakage Current Collector-Emitter Thr...