Low VF Silicon Power Schottky Diode
Features • High Surge Capability • Type 40 V VRRM • Isolation Type Package • Electri...
Low VF Silicon Power
Schottky Diode
Features High Surge Capability Type 40 V VRRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive
MBRT40040(R)L
VRRM = 40 V IF(AV) = 400 A
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRT40040(R)L Unit
Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Operating temperature Storage temperature
VRRM VRMS VDC
Tj Tstg
40 28 40 -55 to 150 -55 to 150
V V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRT40040(R)L Unit
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward voltage (per leg)
Maximum instantaneous reverse current at rated DC blocking voltage (per leg)
Thermal characteristics Maximum thermal resistance, junction - case (per leg)
IF(AV) IFSM VF
IR...
