GA35XCP12-247

IGBT/SiC Diode Co-pack Features Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent switching behavior of SiC rectifier Best RBSOA/SCSOA capability in the industry High junction temperature Industry standard packaging Package RoHS Compliant GA35XCP12-247 VCES = 1200 V I CM = 35 A VCE(SAT) = 3.0 V 2 1 Advantages Industry's highest switching speeds High temperature operation Improved circuit efficiency Low switching losses 1 2 3 TO – 247AB Applications Solar Inverters Aerospace Actuators Server Power Supplies Resonant Inverters > 100 kHz Inductive Heating Electronic Welders 3 Maximum Ratings, at Tj = 150 °C, unless otherwise specified Parameter Symbol Conditions IGBT Collector-Emitter Voltage DC-Collector Current Gate Emitter Peak Voltage Operating Temperature Storage Temp...