GC2X100MPS06-227
650V 200A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capab...
GC2X100MPS06-227
650V 200A SiC
Schottky MPS™ Diode
Silicon Carbide
Schottky Diode
Features
High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit QC/IF 3000 V Isolation for Low Thermal Resistance 175 °C Maximum Operating Temperature Temperature Independent Switching Behavior Positive Temperature Coefficient of VF Extremely Fast Switching Speed
Package
3
VRRM IF (Tc = 100°C) QC
4
= 650 V = 272 A * = 320 nC *
2 1
SOT-227 (Isolated Base)
Advantages
Low Standby Power Losses Improved Circuit Efficiency (Lower Overall Cost) Low Switching Losses Ease of Paralleling without Thermal Runaway Smaller Heat Sink Requirements Low Reverse Recovery Current Low Device Capacitance Low Reverse Leakage Current
Applications
Boost Diode in Power Factor Correction (PFC) Switched Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Motor Drives Freewheeling / Anti-parallel ...
