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GB50MPS17-247 Dataheets PDF



Part Number GB50MPS17-247
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Carbide Schottky Diode
Datasheet GB50MPS17-247 DatasheetGB50MPS17-247 Datasheet (PDF)

GB50MPS17-247 1700V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC Case K A K TO-247-2 A = 1700 V = 81 A = 184 nC Advantages • Low Standby Power Lo.

  GB50MPS17-247   GB50MPS17-247


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GB50MPS17-247 1700V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC Case K A K TO-247-2 A = 1700 V = 81 A = 184 nC Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current Applications • Boost Diode in Power Factor Correction (PFC) • Switched Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Motor Drives • Freewheeling / Anti-parallel Diode in Inverters • Solar I.


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