Silicon Standard Recovery Diode
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive
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Description
Silicon Standard Recovery Diode
Features High Surge Capability Types from 600 V to 1200 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
S320J thru S320QR
VRRM = 600 V - 1200 V IF = 320 A
AC
CA Stud Stud
(R)
DO-9 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S320J (R) S320K (R) S320M (R) S320Q (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms
600 420 600 320
4700
-55 to 150 -55 to 150
800 566 800 320
4700
-55 to 150 -55 to 150
1000 707 1000 320
1200 848 1200 320
4700
4700
-55 to 150 -55 to 150 -55 to 150 -55 to 150
Unit
V V V A
A
°C °C
Electrical characteristics, at Tj = 25 °C,...
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