SiHH068N60E

www.vishay.com SiHH068N60E Vishay Siliconix E Series Power MOSFET PowerPAK® 8 x 8 4 1 2 3 3 Pin 4: drain Pin 1: gate Pin 2: Kelvin connection Pin 3: source N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 80 17 20 Single 0.059 FEATURES 4th generation E series technology Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses Avalanche energy rated (UIS) Kelvin connection for reduced gate noise Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 8 x 8 SiHH068N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dv/dt c TJ = 125 °C EAS PD ...