Document
SVF4N65CAF/D/M/MJ/MN/K _Datasheet
4A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
4A, 650V, RDS(on)(typ.)=2.3Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF4N65CAF SVF4N65CAD SVF4N65CADTR SVF4N65CAM SVF4N65CAMJ SVF4N65CAMN SVF4N65CAK
Package
TO-220F-3L TO-252-2L TO-252-2L TO-251D-3L TO-251J-3L TO-251N-3L TO-262-3L
Marking
SVF4N65CAF 4N65CAD 4N65CAD 4N65CAM 4N65CAMJ 4N65CAMN 4N65CAK
HANGZHOU .