NV6113

NV6113 650 V GaNFast™ Power IC QFN 5 x 6 mm Simplified schematic 1. Features GaNFast™ Power IC Monolithically-integrated gate drive Wide logic input range with hysteresis 5 V / 15 V input-compatible Wide VCC range (10 to 30 V) Programmable turn-on dV/dt 200 V/ns dV/dt immunity 650 V eMode GaN FET Low 300 mΩ resistance Zero reverse recovery charge 2 MHz operation Small, low-profile SMT QFN 5 x 6 mm footprint, 0.85 mm profile Minimized package inductance 2. Description This 650 V GaNFast power IC is optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power converters in the world. The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 5 x 6 mm SMT QFN package allow des...