N-Channel Power MOSFET
FCU600N65S3R0
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive
650 V, 6 A, 600 mW
Description SUPERFET III MOSFET is ...
Description
FCU600N65S3R0
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive
650 V, 6 A, 600 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features
700 V @ TJ = 150°C Typ. RDS(on) = 493 mW Ultra Low Gate Charge (Typ. Qg = 11 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF) 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter
www.onsemi.com
VDSS 650 V
RDS(ON) MAX 600 mW @ 10 V
ID MAX 6A
D
G
S N-Channel MOSFET
GDS I−PAK
(DPAK3 STRAIGHT LEADS) CASE 369AP
MARKING DIAGRAM
$Y&Z&3&K FCU600 N65S3R0
© Semiconductor Components Industries, LLC, 2017
August, 2019 − Rev. 4
$Y &Z &3 &K FCU600N65S3R0
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1
Publication Order Number:
FCU600N65S3R0/D
FCU600N...
Similar Datasheet