FCP067N65S3

FCP067N65S3 MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 44 A, 67 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features 700 V @ TJ = 150°C Typ. RDS(on) = 59 mW Ultra Low Gate Charge (Typ. Qg = 78 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications Telecom / Server Power Supplies Industrial Power Supplies UPS / Solar www.onsemi.com VDSS 650 V RDS(ON) MAX 67 mW @ 10 V ID MAX 44 A D G S POWER MOSFET GD S TO−220 CASE 340AT MARKING DIAGRAM $Y&Z&3&K FCP 067N65S3 © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 4 $Y &Z &3 &K FCP067N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FCP067N65S3/D FCP067N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter FCP067N65S3 Unit VDS...