TPH1R104PB

MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1R104PB 1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH1R104PB SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-03 2020-06-24 Rev.7.0 TPH1R104PB 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (Tc = 25 ) (t = 10 s) (Note 1) (Note 1) (Note 2) VDSS VGSS ID IDP PD 40 V ±20 120 A 360 132 W 3.0 Power dissipation (t = 10 s) (Note 3) 0.96 Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature (Note 4) EAS IAS (Note 5) Tch (Note 5) Tstg 140 mJ 120 A 175  -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol...