NOR Gate. 7UL1T02FU Datasheet

7UL1T02FU Gate. Datasheet pdf. Equivalent

7UL1T02FU Datasheet
Recommendation 7UL1T02FU Datasheet
Part 7UL1T02FU
Description 2-Input NOR Gate
Feature 7UL1T02FU; CMOS Digital Integrated Circuits Silicon Monolithic 7UL1T02FU 1. Functional Description • 2-Input NO.
Manufacture Toshiba
Datasheet
Download 7UL1T02FU Datasheet





Toshiba 7UL1T02FU
CMOS Digital Integrated Circuits Silicon Monolithic
7UL1T02FU
1. Functional Description
• 2-Input NOR Gate with Level Shifting
2. Features
(1) Wide operating voltage range: VCC = 2.3 to 3.6 V
(2) Output level up to supply VCC CMOS level: 1.65 V to 3.6 V (VCC = 3.6 V)
(3) Output level down to supply VCC CMOS level: 3.6 V to 2.3 V (VCC = 2.3 V)
(4) 3.6 V tolerant inputs
(5) 3.6 V power down protection output
3. Packaging
7UL1T02FU
4. Marking and Pin Assignment
USV
Marking
Pin Assignment (Top view)
©2018
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2018-10
2018-06-18
Rev.1.0



Toshiba 7UL1T02FU
5. IEC Logic Symbol
7UL1T02FU
6. Truth Table
ABY
L LH
LHL
HL L
HH L
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 4.6
V
Input voltage
VIN
-0.5 to 4.6
V
DC output voltage
VOUT
(Note 1)
-0.5 to 4.6
V
(Note 2)
-0.5 to VCC + 0.5
Input diode current IIK -20 mA
Output diode current
IOK (Note 3) -20 mA
DC output current
IOUT
±25 mA
VCC/ground current ICC ±50 mA
Power dissipation
PD 200 mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND
©2018
Toshiba Electronic Devices & Storage Corporation
2
2018-06-18
Rev.1.0



Toshiba 7UL1T02FU
8. Operating Ranges (Note)
7UL1T02FU
Characteristics
Symbol
Note
Test Condition
Rating
Supply voltage
VCC
2.3 to 3.6
Input voltage
VIN
0 to 3.6
Output voltage
VOUT
(Note 1)
0 to 3.6
(Note 2)
0 to VCC
Output current
IOH,IOL
VCC = 3.0 to 3.6 V
±8.0
VCC = 2.3 to 2.7 V
±4.0
Operating temperature
Topr
-40 to 85
Input rise and fall time
dt/dv
VIN = 1.65 to 3.6 V
0 to 10
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: VCC = 0 V
Note 2: High (H) or Low (L) state.
Unit
V
V
V
mA
ns/V
©2018
Toshiba Electronic Devices & Storage Corporation
3
2018-06-18
Rev.1.0





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