NXP Semiconductors Technical Data
Document Number: MRF101AN Rev. 1, 05/2019
RF Power LDMOS Transistors
High Ruggedness...
NXP Semiconductors Technical Data
Document Number: MRF101AN Rev. 1, 05/2019
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
MRF101AN MRF101BN
These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.
Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
Pout
Gps
D
(W)
(dB)
(%)
13.56 (1) 27 (2)
40.68 (3) 50 (4)
81.36 (5) 87.5–108 (6,7) 136–174 (7,8)
230 (9)
CW CW CW CW CW CW CW Pulse (100 sec, 20% Duty Cycle)
130 CW 125 CW 120 CW 119 CW 130 CW 115 CW 104 CW 115 Peak
27.1 24.9 23.8 22.8 23.2 20.6 21.2 21.1
79.6 79.6 81.5 82.1 80.8 76.8 76.5 76.7
1.8–250 MHz, 100 W CW, 50 V WIDEBAND
RF POWER LDMOS
TRANSISTORS
S
GSD TO--220--3 MRF101AN S
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin
Test
(W)
Voltage Result
40.68
CW
> 65:1 at all 0.64 CW
50
No Device
Phase
Degradation
Angles
230
Pulse
> 65:1 at all 1.8 Peak
50
No Device
(100 sec, 20%
Phase
(3 dB
Degradation
Duty Cycle)
Angles
Overdrive)
1. Measured in 13.56 MHz reference circuit (page 5).
D
2. Measured in 27 MHz reference circuit (page 9).
3. Measured in 40.68 MHz reference circuit (page 13).
4. Measured in 50 MHz reference circuit (page 17).
5. Measured in 81.36 MHz reference circuit (page 21).
6. Measured in 87.5–108 MHz broadband reference circ...
