STPSC12065-Y
Datasheet
Automotive 650 V, 12 A, silicon carbide power Schottky diode
A
K
K
K
A K
TO-220AC
K
K A
NC
D²...
STPSC12065-Y
Datasheet
Automotive 650 V, 12 A, silicon carbide power
Schottky diode
A
K
K
K
A K
TO-220AC
K
K A
NC
D²PAK
A A
NC
D²PAK HV
Product label
Product status link STPSC12065-Y
Product summary
IF(AV)
12 A
VRRM
650 V
Tj (max.)
175 °C
VF (typ.)
1.30 V
Features
AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability PPAP capable Operating Tj from -40 °C to 175 °C VRRM guaranteed from -40 to +175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top
coating) ECOPACK®2 compliant
Applications
On board charger
Description
The SiC diode is an ultra high performance power
Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a
Schottky diode structure with a 650 V rating. Due to the
Schottky construction, no recovery is shown at turn-off ...