Document
STGWA40HP65FB2
Datasheet
Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
G(1)
C(2)
Features
• Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient
Applications
• Welding • Power factor correction
E(3) G1E3C2D
Product status link
STGWA40HP65FB2
Product summary
Order code
STGWA40HP65FB2
Marking
G40HP65FB2
Package
TO-247 long leads
Packing
Tube
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel wi.