AFP02N8-000

General Purpose PHEMT Chip AFP02N8-000 Features s Low Noise Figure, 1.25 dB @ 4 GHz s High Associated Gain, 15.0 dB @ 4 GHz s High MAG, > 18 dB @ 4 GHz s 0.7 µm Ti/Pd/Au Gates s Passivated Surface 350 125 S G G S 50 50 D D 78 50 Description The AFP02N8-000 general purpose PHEMT chip has excellent gain and noise performance through X band, making it suitable for a wide range of commercial and military applications.The device employs 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. 50 20 400 Absolute Maximum Ratings Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -3 V IDSS 10 µA 300 mW -65 to +150°C 175°C Electrical Specifications at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-off Voltage (VP) Gate to Source Breakdown Voltage (Vbgs) Noise Figure (NF) Associated Gain (GA) Noise Figure (NF) Associated Gain (GA) Test Conditions VDS = 2 V, VGS = 0 V VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 0.3 mA IGS = -200 µA Min. 25.0 40.0 -0.2 -4.0 Typ. 45.0 55.0 -0.6 -6.0 1.25 14.0 8.5 15.0 2.6 9.4 3.0 1.75 -2.0 Max. 90.0 Unit mA mS V V dB dB dB dB VDS = 2 V, IDS = 15 mA, F = 4 GHz VDS = 2 V, IDS = 15 mA, F = 12 GHz Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email [email protected] www.alphaind.com Specifications subject to change without notice. 6/99A 1 ...