FQA10N60C
FQA10N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field ef...
FQA10N60C
FQA10N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
10A, 600V, RDS(on) = 0.73Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability
G DS
TO-3PN
FQA Series
G!
D
!
●
◀▲
● ●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
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