FST10080

Silicon Power Schottky Diode Features High Surge Capability Types from 45 V to 100V VRRM Isolated to Plate Not ESD Sensitive FST10045 thru FST100100 VRRM = 45 V - 100 V IF(AV) = 100 A TO-249AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST10045 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 FST10060 60 42 60 -55 to 150 -55 to 150 FST10080 FST100100 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 Unit V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST10045 Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) Thermal characteristics Thermal resistance, junction ...