NXP Semiconductors Technical Data
Document Number: A3T21H360W23S Rev. 0, 08/2017
RF Power LDMOS Transistor
N--Channel ...
NXP Semiconductors Technical Data
Document Number: A3T21H360W23S Rev. 0, 08/2017
RF Power LDMOS
Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 56 W asymmetrical Doherty RF power LDMOS
transistor is designed
for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
2100 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 600 mA, VGSB = 0.6 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
D
Output PAR
ACPR
(%)
(dB)
(dBc)
2110 MHz 2140 MHz 2170 MHz 2200 MHz
16.4 16.6 16.7 16.5
52.0 51.7 50.7 49.6
7.7 –29.3 7.6 –30.2 7.3 –30.7 7.2 –31.1
Features
Advanced high performance in--package Doherty Designed for wide instantaneous bandwidth applications Greater negative gate--source voltage range for improved Class C operation Able to withstand extremely high output VSWR and broadb...
