IGT60R190D1S

IGT60R190D1S IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC standards Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI G G SK 1 1 SK SK G 1 1 Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Consumer SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC and flyback). For other applications: review CoolGaN™ reliability white paper and contact Infineon regional support Table 1 Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr Key Performance Parameters at TJ = 25 °C Value Unit 600 V 190 mΩ 3.2 nC 23 A 16 nC 0 nC Table 2 Ordering Information Type / Ordering Code Package IGT60R190D1S PG-HSOF-8-3 Marking 60S190D1 Related links see Appendix A Final Data Sheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Table of Contents Features ....................................................................