ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
MRF6S9060NR1 replaced by MRFE6S9060NR1....
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured.
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
Typical Single - Carrier N TIDrQaff=ic4C5o0dmesA,8PTohurt o=u1g4h
-WCaDttMs AAvPge.,rfIoSrm- 9a5nCceD@MA8(8P0ilMotH, Sz,ynVcD,DP=ag2i8ngV,olts, 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
GSM EDGE Application TPyopuPtico=awl2eG1rSWGMaaitEntsD—AGv2Eg0.P, dFeBurflol rFmreaqnuceen: cVyD...
