voltage suppressor. ESDA8P30-1T2 Datasheet

ESDA8P30-1T2 suppressor. Datasheet pdf. Equivalent


STMicroelectronics ESDA8P30-1T2
ESDA8P30-1T2
Datasheet
Small transient voltage suppressor
SOD882T package
Pin configuration
Product status link
ESDA8P30-1T2
Features
• Low clamping voltage
• Peak pulse power:
– 300 W (8/20 µs)
• Stand-off voltage 6.3 V
• Unidirectional diode
• Low leakage current:
– 0.3 µA at 25 °C
• Complies with the following standards: IEC 61000-4-2 level 4
– ± 30 kV (air discharge)
– ± 30 kV (contact discharge)
Application
Where transient over voltage protection in ESD sensitive equipment is required, such
as:
• Smartphones, mobile phones, tablets, portable multimedia
• USB Vbus protection
• Power supply protection
• Battery protection
Description
The ESDA8P30-1T2 is a unidirectional single line TVS diode designed to protect the
power line against EOS and ESD transients.
The device is ideal for applications where high power TVS and board space saving
are required.
DS12517 - Rev 3 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


ESDA8P30-1T2 Datasheet
Recommendation ESDA8P30-1T2 Datasheet
Part ESDA8P30-1T2
Description Small transient voltage suppressor
Feature ESDA8P30-1T2; ESDA8P30-1T2 Datasheet Small transient voltage suppressor Pin1 Pin2 SOD882T package Pin configurat.
Manufacture STMicroelectronics
Datasheet
Download ESDA8P30-1T2 Datasheet




STMicroelectronics ESDA8P30-1T2
ESDA8P30-1T2
Characteristics
1 Characteristics
Symbol
Vpp
Ppp
Ipp
Top
Tstg
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Peak pulse voltage
Peak pulse power (8/20 μs)
Parameter
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
Peak pulse current (8/20 μs)
Operating junction temperature range
Storage junction temperature range
Value
>30
>30
300
30
-55 to 150
-55 to 150
Unit
kV
W
A
°C
°C
Figure 1. Electrical characteristics (definitions)
Symbol
VBR
VCL
IRM
VRM
IPP
RD
IR
=
=
=
=
=
=
=
Parameter
Breakdown voltage
Clamping voltage
Leakage current @ V RM
Stand-off voltage
Peak pulse current
Dynamic resistance
Breakdown current
I
VCL V BR VRM
I RM
IR
Slope = 1/ R d
I PP
V
Symbol
VBR
IRM
VCL
RD
CLINE
Table 2. Electrical characteristics (values) (Tamb = 25° C)
Test conditions
Min.
Typ.
IR = 1 mA
VRM = 6.3 V
IPP = 20 A 8/20µs
IPP = 30 A 8/20µs
8/20µs
6.9 7.3
0.12
VLINE = 0 V, F = 1 MHz, VOSC = 30 mV
170
Max.
7.8
300
11
12
Unit
V
nA
V
pF
DS12517 - Rev 3
page 2/11



STMicroelectronics ESDA8P30-1T2
ESDA8P30-1T2
Characteristics (curves)
1.1 Characteristics (curves)
Figure 2. Peak pulse power dissipation versus initial
junction temperature (typical value)
400
PPP (W)
8/20µs
typical value
Figure 3. Peak pulse power versus exponential pulse
duration (maximum values)
PPP (W)
1000
Tj initial = 25 °C
typical value
300
100
200 Tj( °C)
25 50 75 100 125 150 175
10
10
tp(µs)
100 1000
Figure 4. Peak power dissipation versus initial
temperature (typical value)
Ipp (A)
100
8/20µs
Tj initial = 25 °C
10
1
0.1 VCL (V)
7 8 9 10 11 12
Figure 5. Leakage current versus junction temperature
(typical value)
1600
1400
Ir (nA)
Ir = f(Tj) at Vrm = 6.3 V(typical value)
1200
1000
800
600
400
200
0
0
Tj(°C)
50 100 150 200
Figure 6. ESD response to IEC 61000-4-2 (+8kV contact
discharge)
5 V/div
28.6 V
1
1 Peak clamping voltage
2 Clamping voltage at 30 ns
3 Clamping voltage at 60 ns
4 Clamping voltage at 100 ns
8.7 V
2
8.2V
3
8.0 V
4
20 ns/div
Figure 7. ESD response to IEC 61000-4-2 (-8kV contact
discharge)
5 V/div
2
-1.5 V
3
-1.5 V
4
-1.0 V
1
- 24 V
1 Peak clamping voltage
2 Clamping voltage at 30 ns
3 Clamping voltage at 60 ns
4 Clamping voltage at 100 ns
20 ns/div
DS12517 - Rev 3
page 3/11







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