Fast Rectifier. VS-6DKH02-M3 Datasheet

VS-6DKH02-M3 Rectifier. Datasheet pdf. Equivalent


Vishay VS-6DKH02-M3
www.vishay.com
VS-6DKH02-M3
Vishay Semiconductors
Hyper Fast Rectifier, 2 x 3 A FRED Pt®
8
7
6
5
FlatPAK 5 x 6
1
2
3
4
FEATURES
• Hyper fast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Low forward voltage drop
• Low leakage current
• Specific for output and snubber operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1, 2 7, 8
3, 4 5, 6
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr
TJ max.
Diode variation
FlatPAK 5 x 6
2x3A
200 V
0.71 V
25 ns
175 °C
Separated cathode
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyper fast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
MECHANICAL DATA
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
M3 suffix meets JESD 201 class 2 whisker test
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
SYMBOL
VRRM
Average rectified forward current per device IF(AV)
per device
Non-repetitive peak surge current
per diode
IFSM
TEST CONDITIONS
TSolderpad = 170 °C, DC
TSolderpad = 169 °C, D = 0.5
TJ = 25 °C, 10 ms sinusoidal pulse
VALUES
200
3
147
70
UNITS
V
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage, blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
VBR, VR
VF
IR
CT
IR = 100 μA
IF = 3 A
IF = 3 A, TJ = 150 °C
VR = VR rated
TJ = 150 °C, VR = VR rated
VR = 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.88
0.71
-
6
14
MAX.
-
0.94
0.74
2
40
-
UNITS
V
μA
pF
Revision: 04-May-17
1 Document Number: 96082
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-6DKH02-M3 Datasheet
Recommendation VS-6DKH02-M3 Datasheet
Part VS-6DKH02-M3
Description Hyper Fast Rectifier
Feature VS-6DKH02-M3; www.vishay.com VS-6DKH02-M3 Vishay Semiconductors Hyper Fast Rectifier, 2 x 3 A FRED Pt® 8 7 6 5 .
Manufacture Vishay
Datasheet
Download VS-6DKH02-M3 Datasheet




Vishay VS-6DKH02-M3
www.vishay.com
VS-6DKH02-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
- 26
Reverse recovery time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
TJ = 25 °C
--
- 15
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 3 A
dIF/dt = 200 A/μs
VR = 160 V
-
-
-
-
-
25
2
3
12
40
MAX.
-
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to ambient
Thermal resistance,
junction to case
SYMBOL
TJ, TStg
RthJA (1)(2)
RthJC (3)
TEST CONDITIONS
MIN.
-65
-
-
TYP.
-
90
2.3
Notes
(1) The heat generated must be less than thermal conductivity from junction to ambient; dPD/dTJ < 1 x RthJA
(2) Free air, mounted or recommended copper pad area; thermal resistance RthJA - junction to ambient
(3) Mounted on infinite heatsink
MAX.
175
103
2.6
UNITS
°C
°C/W
100
10
TJ = 175 °C
1
0.1
0.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.4 0.6 0.8 1.0 1.2 1.4
VF - Forward Voltage Drop (V)
1.6
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
TJ = 175 °C
10 TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
0
50 100 150
VR - Reverse Voltage (V)
200
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 04-May-17
2 Document Number: 96082
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-6DKH02-M3
www.vishay.com
100
VS-6DKH02-M3
Vishay Semiconductors
10
0
50 100 150 200
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1000
100 Junction to ambient
10
Junction to case
1
0.1
0.01
0.00001
0.0001
0.001
0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
10
Fig. 4 - Maximum Thermal Impedance Zth Characteristics
100
1000
200
180
160
TC = 170 °C
140 RthJA = 2.3 °C/W
120
100
80
60 TC = 25 °C
40 RthJA = 90 °C/W
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
4.0
3.5
RMS limit
3.0
2.5
2.0 D = 0.01
D = 0.05
1.5 D = 0.1
D = 0.2
1.0 D = 0.5
0.5 DC
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 04-May-17
3 Document Number: 96082
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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