voltage suppressor. ESDA22P150-1U3M Datasheet

ESDA22P150-1U3M suppressor. Datasheet pdf. Equivalent


STMicroelectronics ESDA22P150-1U3M
ESDA22P150-1U3M
Datasheet
High power transient voltage suppressor
Pin #1 ID
11
33
22
Top view
Bottom view
Pin 3
Vbus (Vbus pin)
Pin 1, 2*
GND (ground pin)
*Pin 1 and Pin 2 must be connected together.
Product status link
ESDA22P150-1U3M
Features
• Low clamping voltage
• Peak pulse power:
– 4500 W (8/20µs)
• Stand off voltage 20 V
• Unidirectional diode
• Low leakage current:
– 0.25 µA at 25°C
• Complies with the following standards: IEC 61000-4-2 level 4
– ± 30 kV (air discharge)
– ± 30 kV (contact discharge)
Application
Where transient over voltage protection in ESD sensitive equipment is required, such
as:
• Smartphones, mobile phones, tablets, portable multimedia
• USB Vbus protection
• Power supply protection
• Battery protection
Description
The ESDA22P150-1U3M is a unidirectional single line TVS diode designed to protect
the power line against EOS & ESD transients.
The device is ideal for applications where high power TVS and board space saving is
required.
DS12572 - Rev 1 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


ESDA22P150-1U3M Datasheet
Recommendation ESDA22P150-1U3M Datasheet
Part ESDA22P150-1U3M
Description High power transient voltage suppressor
Feature ESDA22P150-1U3M; ESDA22P150-1U3M Datasheet High power transient voltage suppressor Pin #1 ID 11 33 22 Top view B.
Manufacture STMicroelectronics
Datasheet
Download ESDA22P150-1U3M Datasheet




STMicroelectronics ESDA22P150-1U3M
ESDA22P150-1U3M
Characteristics
1 Characteristics
Symbol
Vpp
Ppp
Ipp
Ppp
Ipp
Top
Tstg
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Peak pulse voltage
Peak pulse power (8/20 μs)
Parameter
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
Peak pulse current (8/20 μs)
Peak pulse power (10/1000 μs)
Peak pulse current (10/1000 μs)
Operating junction temperature range
Storage junction temperature range
Value
>30
>30
4500
150
330
11
-55 to 150
-55 to 150
Unit
kV
W
A
W
A
°C
°C
Figure 1. Electrical characteristics (definitions)
Symbol
VBR
VCL
IRM
VRM
IPP
RD
IR
VF
IF
=
=
=
=
=
=
=
=
=
Parameter
Breakdown voltage
Clamping voltage
Leakage current @ V RM
Stand-off voltage
Peak pulse current
Dynamic resistance
Breakdown current
Forward voltage
Forward current
I
VCL V BR VRM
IF
IRM VF
IR
Slope = 1/ R d
I PP
V
Symbol
VRM
VBR
IRM
VCL
RD
VCL
RD
VF
Table 2. Electrical characteristics (values) (Tamb = 25° C)
Parameter
Min.
Typ.
IR = 1 mA
VRM = 20 V
IPP = 100 A 8/20µs
IPP = 150 A 8/20µs
8/20µs
IPP = 9.2 A 10/1000 µs
10/1000 µs
IF = 10 mA
21 22
28
31
0.06
27.5
0.5
0.7
Max.
20
23.5
250
31
34
30
Unit
V
V
nA
V
V
V
DS12572 - Rev 1
page 2/12



STMicroelectronics ESDA22P150-1U3M
ESDA22P150-1U3M
Characteristics (curves)
1.1 Characteristics (curves)
Figure 2. Peak pulse power dissipation versus initial
temperature (typical value)
PPP (W)
6000
5000
8/20µs
4000
3000
2000
1000
Tj( °C)
0
25 50 75 100 125 150 175
Figure 3. Peak pulse power versus exponential pulse
duration (typical value)
PPP (W)
10000
Tj initial = 25 °C
1000
100
10
tp(µs)
100 1000
Figure 4. Peak pulse current versus clamping voltage
(max value, 8/20 µs)
Ipp (A)
100
8/20µs
Tj initial = 25 °C
10
1
Figure 5. Peak pulse current versus clamping voltage
(max value, 10/1000 µs)
Ipp (A)
10
10/1000 µs
Tj initial = 25 °C
1
0.1
VCL (V)
0.1
VCL (V)
23 25
27 29
31
23
25
27
29
31
Figure 6. Leakage current versus junction temperature (typical value)
Ir (nA)
200
180
160
140
120
100
80
60
40
20
0
20
40
I rm at Vrm = 20 V
Tj(°C)
60
80
100
120
140
160
DS12572 - Rev 1
page 3/12







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