General-Purpose Amplifier. PZT3906 Datasheet

PZT3906 Amplifier. Datasheet pdf. Equivalent

PZT3906 Datasheet
Recommendation PZT3906 Datasheet
Part PZT3906
Description PNP General-Purpose Amplifier
Feature PZT3906; 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier 2N3906 / MMBT3906 / PZT3906 PNP General.
Manufacture ON Semiconductor
Datasheet
Download PZT3906 Datasheet




ON Semiconductor PZT3906
2N3906 / MMBT3906 / PZT3906
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
and switching applications at collector currents of 10 mA
to 100 mA.
2N3906
EBC
TO-92
MMBT3906
C
SOT-23
Mark:2A
E
B
PZT3906
C
SOT-223
E
C
B
Ordering Information
Part Number
2N3906BU
2N3906TA
2N3906TAR
2N3906TF
2N3906TFR
MMBT3906
PZT3906
Marking
2N3906
2N3906
2N3906
2N3906
2N3906
2A
3906
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-223 4L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Pack Quantity
10000
2000
2000
2000
2000
3000
2500
© 2010 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
PZT3906/D



ON Semiconductor PZT3906
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-40
-40
-5.0
-200
-55 to +150
V
V
V
mA
°C
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJC
RθJA
Parameter
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N3906(3)
625
5.0
83.3
200
Maximum
MMBT3906(2)
350
2.8
PZT3906(3)
1,000
8.0
357 125
Unit
mW
mW/°C
°C/W
°C/W
Notes:
2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
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ON Semiconductor PZT3906
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
OFF CHARACTERISTICS
Conditions
V(BR)CEO
Collector-Emitter Breakdown
Voltage(4)
IC = -1.0 mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0
V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0
IBL Base Cut-Off Current
VCE = -30 V, VBE = 3.0 V
ICEX Collector Cut-Off Current
VCE = -30 V, VBE = 3.0 V
ON CHARACTERISTICS
hFE DC Current Gain(4)
VCE(sat)
Collector-Emitter Saturation
Voltage
VBE(sat) Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -50 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0V
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
fT
Current Gain - Bandwidth Product
IC = -10 mA, VCE = -20 V,
f = 100 MHz
Cobo Output Capacitance
VCB = -5.0 V, IE = 0,
f = 100 kHz
Cibo Input Capacitance
NF Noise Figure
VEB = -0.5 V, IC = 0,
f = 100 kHz
IC = -100 μA, VCE = -5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
VCC = -3.0 V, VBE = -0.5 V
IC = -10 mA, IB1 = -1.0 mA
VCC = -3.0 V, IC = -10 mA,
IB1 = IB2 = -1.0 mA
Note:
4. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Min.
-40
-40
-5.0
60
80
100
60
30
-0.65
250
Max. Unit
V
V
V
-50 nA
-50 nA
300
-0.25
-0.40
-0.85
-0.95
V
V
MHz
4.5 pF
10.0 pF
4.0 dB
35 ns
35 ns
225 ns
75 ns
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