power transistors. BCP56-10H Datasheet

BCP56-10H transistors. Datasheet pdf. Equivalent

BCP56-10H Datasheet
Recommendation BCP56-10H Datasheet
Part BCP56-10H
Description NPN medium power transistors
Feature BCP56-10H; SOT223 BCP56H series 80 V, 1 A NPN medium power transistors Rev. 1 — 23 November 2016 Product data.
Manufacture nexperia
Datasheet
Download BCP56-10H Datasheet




nexperia BCP56-10H
BCP56H series
80 V, 1 A NPN medium power transistors
Rev. 1 — 23 November 2016
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
BCP56H
SOT223
BCP56-10H
BCP56-16H
JEITA
SC-73
JEDEC
-
PNP complement
BCP53H
BCP53-10H
BCP53-16H
1.2 Features and benefits
High collector current capability IC and ICM
Three current gain selections
High power dissipation capability
High-temperature applications up to 175 C
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
MOSFET drivers
Low-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
VCEO
IC
ICM
collector-emitter voltage open base
collector current
peak collector current single pulse; tp 1 ms
Min Typ Max Unit
- - 80 V
- - 1A
- - 2A



nexperia BCP56-10H
NXP Semiconductors
BCP56H series
80 V, 1 A NPN medium power transistors
Table 2. Quick reference data …continued
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
hFE DC current gain
BCP56-10H
BCP56-16H
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 150 mA
[1] 63
[1] 63
[1] 100
-
-
-
250
160
250
[1] Pulse test: tp 300 s; = 0.02
2. Pinning information
Table 3.
Pin
1
2
3
4
Pinning
Symbol
B
C
E
C
Description
base
collector
emitter
collector
Simplified outline
4
123
Graphic symbol
C
B
E
sym123
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
BCP56H
BCP56-10H
SC-73
plastic surface-mounted package with increased
heatsink; 4 leads
BCP56-16H
Version
SOT223
4. Marking
Table 5. Marking codes
Type number
BCP56H
BCP56-10H
BCP56-16H
Marking code
BCP56H
P5610H
P5616H
BCP56H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 November 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
2 of 16



nexperia BCP56-10H
NXP Semiconductors
BCP56H series
80 V, 1 A NPN medium power transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
single pulse;
tp 1 ms
Tamb 25 C
-
-
-
-
-
-
-
[1] -
[2] -
[3] -
[4] -
[5] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
55
65
Max Unit
100 V
80 V
7V
1A
2A
0.2 A
0.3 A
725
1.2
1.5
1.6
2.2
+175
+175
+175
mW
W
W
W
W
C
C
C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper; tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper; tin-plated; mounting pad for collector 1 cm2.
BCP56H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 November 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
3 of 16







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