Schottky Rectifier. TSF30H200C Datasheet

TSF30H200C Rectifier. Datasheet pdf. Equivalent

TSF30H200C Datasheet
Recommendation TSF30H200C Datasheet
Part TSF30H200C
Description Trench Schottky Rectifier
Feature TSF30H200C; creat by AR TSF30H100C thru TSF30H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - .
Manufacture Taiwan Semiconductor
Datasheet
Download TSF30H200C Datasheet




Taiwan Semiconductor TSF30H200C
creat by AR
TSF30H100C thru TSF30H200C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
TSF30H
SYMBOL
100C
TSF30H
120C
TSF30H
150C
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
VRRM
IF(AV)
100
120 150
30
15
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Voltage rate of change (Rated VR)
Isolation voltage from terminal to heatsink t = 1 min
dV/dt
VAC
10000
1500
Typ Max Typ Max Typ Max
Instantaneous forward voltage
per diode ( Note1 )
IF = 15A
IF = 30A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
VF
IR
RθJC
TJ
TSTG
0.76 0.82 0.80 0.88 0.81 0.90
0.64 0.69 0.65 0.73 0.68 0.77
0.86 0.92 0.90 0.96 0.89 0.98
0.75 0.80 0.78 0.86 0.77 0.86
150
20
4.5
- 55 to +150
- 55 to +150
TSF30H
200C
200
Typ
0.84
0.70
0.91
0.80
Max
0.92
0.79
1.00
0.89
UNIT
V
A
A
V/μs
V
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1411039
Version: G14



Taiwan Semiconductor TSF30H200C
TSF30H100C thru TSF30H200C
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
TSF30HXXXC
(Note 1)
C0
G
Note 1: "xxx" defines voltage from 100V (TSF30H100C) to 200V (TSF30H200C)
PACKAGE
ITO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED
PART NO.
TSF30H120C C0G
PART NO.
TSF30H120C
PACKING CODE
C0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
40
35
30
25
20
15
10
WITH HEATSINK
5 3in x 5in x 0.25in
Al-Plate
0
0 25 50 75 100 125 150
CASE TEMPERATURE (oC)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
TSF30H100C
Tj=150°C
10
Tj=125°C
1
Tj=25°C
0.1
0.01
0
0.2 0.4 0.6 0.8 1 1.2 1.4
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
100
TSF30H120C
10 Tj=150°C
1 Tj=125°C
Tj=100°C
0.1 Tj=25°C
0.01
0 0.2 0.4 0.6 0.8 1 1.2
FORWARD VOLTAGE (V)
Document Number: DS_D1411039
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
TSF30H150C
Tj=150°C
10
Tj=125°C
1
Tj=100°C
0.1 Tj=25°C
0.01
0
0.2 0.4 0.6 0.8 1 1.2 1.4
FORWARD VOLTAGE (V)
Version: G14



Taiwan Semiconductor TSF30H200C
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
100
TSF30H200C
10 TJ=150°C
1 TJ=125°C
TJ=100°C
0.1 TJ=25°C
0.01
0
0.2 0.4 0.6 0.8 1 1.2 1.4
FORWARD VOLTAGE (V)
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
10
TSF30H120C
TJ=150°C
1
0.1
0.01
TJ=125°C
TJ=100°C
0.001
0.0001
TJ=25°C
0.00001
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
10
TSF30H200C
1
TJ=150°C
TJ=125°C
0.1 TJ=100°C
0.01
0.001
0.0001
TJ=25°C
0.00001
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
Document Number: DS_D1411039
TSF30H100C thru TSF30H200C
Taiwan Semiconductor
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100
TSF30H100C
10
TJ=150°C
1
TJ=125°C
0.1
0.01
0.001
TJ=25°C
0.0001
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
10
TSF30H150C
1 TJ=150°C
0.1 TJ=125°C
0.01
TJ=100°C
0.001
0.0001
TJ=25°C
0.00001
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG. 10 TYPICAL JUNCTION CAPACITANCE
10000
1000
TSF30H100C
TSF30H120C
TSF30H150C
100 TSF30H200C
f=1.0MHz
Vsig=50mVp-p
10
0.1
1 10
REVERSE VOLTAGE (V)
100
Version: G14







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