Dropout Regulator. TCR5BM34A Datasheet


TCR5BM34A Regulator. Datasheet pdf. Equivalent


TCR5BM34A


500mA CMOS Ultra Low Dropout Regulator
TCR5BM series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

TCR5BM series

500 mA CMOS Ultra Low Dropout Regulator
The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response.
A differentiating feature is the use of a secondary bias rail as a reference voltage that allows ultra low dropout of 100 mV (Typ.) at IOUT = 500 mA (1.1 V output, VBIAS = 3.3 V).
These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V, and capable of driving up to 500 mA. Other features include overcurrent protection, thermal shutdown, and Auto-discharge.
The TCR5BM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm).
As small ceramic input and output capacitors can be used with the TCR5BM series, these devices are ideal for portable applications that require high-density board assembly such as cell...



TCR5BM34A
TCR5BM series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR5BM series
500 mA CMOS Ultra Low Dropout Regulator
The TCR5BM series are CMOS single-output voltage regulators with an
on/off control input, featuring ultra low dropout voltage, high PSRR, low
inrush current and fast load transient response.
A differentiating feature is the use of a secondary bias rail as a reference
voltage that allows ultra low dropout of 100 mV (Typ.) at IOUT = 500 mA (1.1
V output, VBIAS = 3.3 V).
These voltage regulators are available in fixed output voltages between 0.8
V and 3.6 V, and capable of driving up to 500 mA. Other features include
overcurrent protection, thermal shutdown, and Auto-discharge.
The TCR5BM series are offered in the ultra small plastic mold package
DFN5B (1.2 mm x 1.2 mm; t 0.38 mm).
As small ceramic input and output capacitors can be used with the
TCR5BM series, these devices are ideal for portable applications that require
high-density board assembly such as cellular phones.
Weight : 1.4 mg (Typ.)
DFN5B
Features
Low dropout voltage
VDO = 100 mV (Typ.) at 1.1 V output, VBIAS = 3.3 V , IOUT = 500 mA
Low stand-by current (IBIAS(OFF) = 1 μA (Max))
Low quiescent bias current ( IBIAS(ON) = 19 μA (Typ.) at VBIAS = 5.3 V, IOUT = 0 mA )
Wide range output voltage line up VOUT = 0.8 to 3.6 V
Overcurrent protection
Thermal shutdown
Inrush current reduction
Under voltage lockout (TCR5BMxxA products)
Auto-discharge
Pull down connection between CONTROL and GND
Ultra small package DFN5B (1.2 mm x 1.2 mm ; t 0.38 mm)
© 2018-2019
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2018-08
2019-01-15

TCR5BM34A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Bias voltage
Input voltage
Control voltage
Output voltage
Power dissipation
Junction temperature
Storage temperature range
VBIAS
VIN
VCT
VOUT
PD
Tj
Tstg
-0.3 to 6.0
-0.3 to 6.0
-0.3 to 6.0
-0.3 to VIN + 0.3 6.0
600 (Note 1)
-40 to 150
55 to 150
V
V
V
V
mW
°C
°C
TCR5BM series
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the
operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1:
Rating at mounting on a board
(Glass epoxy board dimension : 40 mm x 40 mm (4layer)t = 1.8 mm
Metal pattern ratio : approximately 70 % each layer)
Operating Ranges
Characteristics
Bias voltage
Input voltage
Control voltage
Output voltage
Output current
Operation Temperature
COUT
CIN
CBIAS
Symbol
VBIAS
VIN
VCT
VOUT
IOUT
Topr
COUT
CIN
CBIAS
Rating
Unit
(VOUT + 1.4 2.5) to 5.5
VOUT + VDO to VBIAS
0 to VBIAS
0.8 to 3.6
0 to 0.5
(Note 2)
40 to 85
2.2 μF
1.0 μF
0.1 μF
V
V
V
V
A
°C
Note 2:
Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to
such conditions may adversely impact product reliability and results in failures not covered by warranty.
Maximum operating ranges output current specification defined as lifetime average junction temperature of +45°C
where max rated DC current = lifetime average current to avoid electro migration.
© 2018-2019
Toshiba Electronic Devices & Storage Corporation
2
2019-01-15




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