Document
1Gb (x16) - DDR3/DDR3L Synchronous DRAM (1600)
Preliminary Datasheet
64M x 16 bit DDR3/3L Synchronous DRAM (1600)
Overview
The 1Gb Double-Data-Rate-3 (DDR3/3L) SDRAM is double data rate architecture to achieve high speed double-datarate transfer rates of up to 1600 Mb/sec/pin for general applications. It is internally configured as an eight bank DRAM.
The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed doubledata-rate transfer rates of up to 1600 Mb/sec/pin for general applications.
The chip is designed to comply with all DDR3L DRAM key features, including full backward compatibility to DDR3. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks and inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion.
These devices operate with a single +1.35V -0.067.