BUK9D23-40E
40 V, N-channel Trench MOSFET
13 December 2017
Product data sheet
1. General description
N-channel enhance...
BUK9D23-40E
40 V, N-channel Trench MOSFET
13 December 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 10 V; Tsp = 25 °C
Ptot total power dissipation Tsp = 25 °C
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 8 A; Tj = 25 °C resistance
Min Typ Max Unit
- - 40 V
...
