BUK6D23-40E

BUK6D23-40E 40 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tsp = 25 °C Ptot total power dissipation Tsp = 25 °C Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 8 A; Tj = 25 °C resistance Min Typ Max Unit - - 40 V -20 - 20 V - - 19 A - - 15 W - 17 23 mΩ Nexperia BUK6D23-40E 40 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline Graphic symbol 16 7 25 D G 384 mbb076 S Transparent top view DFN2020MD-6 (SOT1220) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6D23-40E DFN2020MD-6 DFN2020MD-6: plastic thermal...