EPC2051

eGaN® FET DATASHEET EPC2051 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 25 mΩ ID , 1.7 A D G S EPC2051 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) Drain-to-Source Voltage (p to 10,000 5 ms pulses at 150°C) ID Continuous (TA = 25°C) Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Voltage Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE 100 120 1.7 37 6 -4 -40 to 150 -40 to 150 UNIT V A V °C Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction to Case 3.8 R...