AJT006
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .310 2L FLG
4x .062 x 45° A .040 x 45° C
DESCRIPTION:
D
2xB ØE F...
AJT006
NPN SILICON RF POWER
TRANSISTOR
PACKAGE STYLE .310 2L FLG
4x .062 x 45° A .040 x 45° C
DESCRIPTION:
D
2xB ØE F G H I J K L R N DIM A B C D E F G H I J .552 / 14.02 .790 / 20.07 .300 / 7.62 .003 / 0.08 .052 / 1.32 .118 / 3.00 MINIMUM
inches / mm
The ASI AJT006 is Designed for
FEATURES:
Input Matching Network Omnigold™ Metalization System
M
P
MAXIMUM
inches / mm
.095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02
.105 / 2.67 .120 / 3.05 .306 / 7.77 .130 / 3.30 .318 / 8.08
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θ JC
O
0.9 A 32V 25 W @ TC ≤ 75 C
O O O
.572 / 14.53 .810 / 20.57 .320 / 8.13 .006 / 0.15 .072 / 1.83 .131 / 3.33 .230 / 5.84
K L M N P R
-65 C to +250 C -65 C to +200 C 7.0 OC/W
O
ORDER CODE: ASI10544
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICES hFE PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCE = 28 V
TC = 25 C
O
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
48 48 3.5 0.5
UNITS
V V V mA --dB %
VCE = 5.0 V VCC = 45 V
IC = 250 mA POUT = 6.0 W f = 960-1215 MHz
30 9.3 40
300
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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