AJT085

AJT085 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG A .025 x 45° DESCRIPTION: C 2X B ØD 4x .062 x 45° The ASI AJT085 is Designed for E F G FEATURES: Input Matching Network Omnigold™ Metalization System H I J K P M N L DIM A B C D E MINIMUM inches / mm MAXIMUM inches / mm .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .450 / 11.43 .125 / 3.18 .640 / 16.26 .890 / 22.61 .395 / 10.03 .004 / 0.10 .052 / 1.32 .118 / 3.00 .030 / 0.76 .396 / 10.06 .130 / 3.30 .407 / 10.34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 8.0 A 40 V 300 W @ TC ≤ 100 C O F G H I J K L .660 / 16.76 .910 / 23.11 .415 / 10.54 .007 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 -65 OC to +250 OC -65 OC to +200 OC 0.75 OC/W M N P ORDER CODE: ASI10547 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 25 mA IC = 25 mA IE = 10 mA VCE = 35 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 55 55 3.5 20 UNITS V V V mA --dB % VCE = 5.0 V VCC = 50 V MHz IC = 2.0 A POUT = 85 W f = 960 – 1215 20 7.5 40 200 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...