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2N7002

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N-Channel Enhancement Mode Power MOSFET

2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω...


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2N7002

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2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 2300V High power and current handing capability Lead free product is acquired Surface mount package Schematic diagram Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. Battery operated systems Solid-state relays Marking and pin assignment Package Marking And Ordering Information Device Marking 7002 Device 2N7002 Device Package SOT-23 Reel Size Ø180mm SOT-23 top view Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150 ) Drain Current-Pulsed (Note 1) TA =25 TA =100 Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Symbol VDS VGS ID IDM PD TJ,TSTG Thermal Resistance,Junc...




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