2N7002

2N7002 N-Channel Enhancement-Mode Vertical DMOS FET Features Free from Secondary Breakdown Low Power Drive Requirement Ease of Paralleling Low CISS and Fast Switching Speeds Excellent Thermal Stability Integral Source-Drain Diode High Input Impedance and High Gain Applications Motor Controls Converters Amplifiers Switches Power Supply Circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) General Description The 2N7002 is a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s ve...