PMV120ENEA
60 V, N-channel Trench MOSFET
4 March 2016
Product data sheet
1. General description
N-channel enhancement ...
PMV120ENEA
60 V, N-channel Trench MOSFET
4 March 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 2.1 A; Tj = 25 °C
Min Typ Max Unit
- - 60 V
-20 -
20 V
[1] - - 2.1 A
- 96 123 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, ti...