BCW30LT1G

BCW30LT1G, SBCW30LT1G General Purpose Transistors PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −32 Vdc Collector − Base Voltage Emitter-Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCBO VEBO IC −32 −5.0 −100 Vdc Vdc mAdc Characteristic Symbol Value Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C PD mW 225 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those list...