SGM1K35N20

Elektronische Bauelemente SGM1K35 20 1.6A, 200V, RDS(O ) 1.35Ω -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SGM1K35N20 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . The SGM1K35N20 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 35N20 = Date code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current @VGS=10V 1 Pulsed Drain Current 4 Total Power Dissipation 2 TA=25°C TA=70°C TA=25°C VGS ID IDM PD Operating Junction and Storage Temperature Ran...