SSM3K361TU

MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM3K361TU 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 � MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Pin Assignment SSM3K361TU 1: Gate 2: Source 3: Drain UFM 4. Orderable part number Orderable part number AEC-Q101 SSM3K361TU,LF SSM3K361TU,LXGF SSM3K361TU,LXHF � YES YES Note 1: For detail information, please contact our sales. (Note 1) Note General Use Unintended Use Automotive Use (Note 1) ©2016-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-12 2022-04-19 Rev.9.0 SSM3K361TU 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 100 V VGSS ±20 Drain current (DC) (Note 1) ID 3.5 A Drain current (pulsed) (Note 1), (Note 2) IDP 14 Power dissipation (Note 3) PD 1.0 W Power dissipation (t = 10 s) (Note 3) PD 1.8 Single-pulse avalanche energy (Note 4) EAS 9.1 mJ Avalanche current Channel temperature IAR (Note 5) Tch 3.5 A 175 � Storage temperature (Note 5) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may ca...