Silicon P-Channel MOSFET
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J801R
1. Applications
• Power Management Switches
2. Features
(1) 1.5 V gate ...
Description
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J801R
1. Applications
Power Management Switches
2. Features
(1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
TSOP6F
SSM6J801R
1, 2, 5, 6: Drain 3: Gate 4: Source
©2016 Toshiba Corporation
1
Start of commercial production
2016-10
2016-12-19 Rev.3.0
SSM6J801R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -20 V
Gate-source voltage
VGSS
-8/+6
Drain current (DC) Drain current (pulsed)
(Note 1) (Note 1), (Note 2)
ID IDP
-6.0 -24.0
A
Power dissipation
(Note 3)
PD
1.5 W
Power dissipation
t = 10 s
(Note 3)
3.0
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under h...
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