SSM3J356R

MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J356R 1. Applications Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment SSM3J356R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J356R,LF SSM3J356R,LXGF SSM3J356R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2016-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-09 2023-07-05 Rev.7.0 SSM3J356R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -2 A Drain current (pulsed) (Note 1), (Note 2) IDP -6 Power dissipation Power dissipation (Note 3) PD (t ≤ 10 s) (Note 3) 1 W 2 Channel temperature Tch 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e...